Figure 8 | Scientific Reports

Figure 8

From: Controllable high-throughput high-quality femtosecond laser-enhanced chemical etching by temporal pulse shaping based on electron density control

Figure 8

(a) The normalized Raman spectra of modified regions irradiated by fs laser double pulse with different laser fluences. (b) The percent area of the total reduced Raman spectrum under the D2 line versus the laser fluence, where the dashed line represents that of the unmodified original fused silica. The pulse delay is fixed at 350 fs and each site is irradiated by 500 shots. The measurements are conducted in a regions located 5 μm below the surface.

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