Figure 3 | Scientific Reports

Figure 3

From: All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

Figure 3

I-V characteristics of a CoOx/IGZO/CoOx selector according to various n-type oxide semiconductor characteristics.

(a) Hall carrier concentration, resistivity and optical band gap of IGZO thin films as a function of RF power. The physical features of representative O2 (0.2 sccm) reactive IGZO layer are indicated by filled stars. (b) I-V responses of several p-n-p selectors consisting of various IGZO layers at a fixed CoOx layer. (c) Double-logarithmic scale plot taken at positive bias.

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