Figure 1 | Scientific Reports

Figure 1

From: Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

Figure 1

Typical bipolar non-volatile RS characteristics of the CeO2:Gd-based memory device.

(a) I-V curve in semi-logarithmic scale under dark conditions (blue curve) and under UV irradiation (pink curve). (b–c) magnified images of low-resistance and high-resistance states. (d) Endurance performance of the memory device under UV irradiation over more than 104 switching cycles. (e) Distributions of threshold voltages (VON and VOFF) over 50 consecutive switching cycles.

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