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Figure 1

From: Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

Figure 1

Characteristics of the ALD GaN buffer layer.

(a) XRD patterns of the as-deposited and PDA-treated GaN BLs grown by RP-ALD together with that of the PDA-treated GaN NL grown by MOCVD. (b) Room-temperature micro-PL spectra of the PDA-treated ALD BL and the PDA-treated MOCVD NL. The magnified PL spectra are shown in the inset.

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