Figure 3

dc resistivity and photoemission.

Main panel: Theory-experiment comparison of dc resistivity [ρ_dc(T)] of bismuth, showing good semiquantitative agreement with experiment⁶ above 30 K. Notice the quasilinear temperature dependence of transport data which is quantitatively reproduced by LDA + DMFT. (Noteworthy, the theory curve was rescaled by an overall constant to coincide with experiment at 300 K.) Right-lower panel: Temperature dependence of dc resistivities as function of V: Interesting are the changes in slope of ρ_dc(T) below 33 K with increasing V in good semiquantitative agreement with experiments^11,18. Left-upper panel: Comparison between the LDA + DMFT total DOS and photoemission (PES) data for Bi_0.9Sb_0.1⁶. Here, the main bulk-like peak structure at 0.7 eV binding energy is resolved within LDA + DMFT.