Figure 3
From: Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes
Electrical performance of two-layer 3D Ta2O5-x/TaOy RRAM with graphene edge electrode:
(a) Forming process of the cells in top and bottom layer which shows a self -compliance property without external device to limit the currents; (b) typical bipolar resistive switching; (c) retention measurement at 85 °C with 1 V read voltage.
