Figure 6
From: Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes
Electrical performance of 3D Ta2O5-x/TaOy RRAM with metallic CNT edge electrode:
(a) the Semi-log I-V curves of CNT between TaOy and Sc electrode; (b) the typical bipolar resistive switching; (c) the retention measurement at 85 °C with 1 V read voltage. And electrical performance of device with semiconducting CNT BE: (a) the Semi-log I-V curves of CNT between TaOy and Sc electrode, with the band-gap structure shown in the inset image; (b) the typical bipolar resistive switching with a rectification ratio more than 103; (c) the retention measurement at 85 °C with 5 V read voltage.
