Figure 2 | Scientific Reports

Figure 2

From: AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Figure 2

(a) Schematic of an AlGaN/GaN MOS-HEMT with an overlaying P(VDF-TrFE) film and a gold (Au) electrode. Without polarization, the dipoles in the P(VDF-TrFE) film are randomly distributed. The 2-DEG density of AlGaN/GaN heterostructure without polarization is n0. (b) Schematic of AlGaN/GaN MOS-HEMTs with a positively polarized P(VDF-TrFE) film (i.e. positively charged H atoms aligned to the AlGaN surface). The 2-DEG density with polarization for AlGaN/GaN heterostructure is n1, which is larger than the value of n0 as shown in (a). (c) Energy band diagram of the Al0.25Ga0.75N/GaN heterostructure from a TCAD simulation (Synopsys Sentaurus simulator) along the blue line AB [shown in Fig. 1(a,b)] with unpolarized (solid lines) and positively polarized (dash lines) P(VDF-TrFE) gating (Positive charge density 3.0 × 1013 cm−2 on the AlGaN surface is used in the calculation here). (d) Zoomed-in band alignment and (e) Electron distribution profile of the circled region in Fig. 1(c) in the access region of the AlGaN/GaN MOS-HEMT with unpolarized (solid lines) and polarized (dash lines) P(VDF-TrFE) gating.

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