Figure 3 | Scientific Reports

Figure 3

From: AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Figure 3

(a) Simulated 2-DEG density for Al0.25Ga0.75N(25 nm)/GaN heterostructure as a function of positive charge density on the AlGaN surface. (b) Polarization as a function of drive voltage (P – V), for AlGaN/GaN MOS-HEMTs with P(VDF-TrFE) gating. The voltage is biased between the Au electrode (grounded) and the source/drain pads. The Au electrode was grounded and the drive voltage applied on the source/drain pads was swept from 0 V to the positive maximum voltage, then back to the negative maximum voltage and then to 0 V.

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