Table 1 Comparison of P(VDF-TrFE) with other ferroelectric materials.

From: AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Ferroelectric material

P(VDF-TrFE)

PbTiO3

SrBi2Nb2O9

BiFeO3

Remnant Polarization Pr (mC/cm2)

4.8

53

11.46

95

Coercive Field E C (MV/cm)

1.2

0.75

0.034

0.012

Deposition Method

Spin coating

MBE1

PLD2

LDMOCVD3

Deposition Temperature (°C)

25

600 ~ 650

400

630

Reference

This work

28

29

30

  1. Liu et al.
  2. 1MBE: Molecular Beam Epitaxy.
  3. 2PLD: Pulsed Laser Deposition.
  4. 3LDMOCVD: Liquid Delivery Metal Organic Chemical Vapor Deposition.
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