Figure 4
From: Tunneling spectroscopy of close-spaced dangling-bond pairs in Si(001):H

Iso-density (0.01 Å3) plot of the highest-energy unoccupied defect level associated with positively charged (+0) “cross” (left) and “line” (right) DB pairs.
For the “line” structure the orbital extends to both DB sites but for the “cross” the orbital can be assigned unambiguously to one of the two DB sites.