Figure 5
From: Tunneling spectroscopy of close-spaced dangling-bond pairs in Si(001):H
Projected density of states (PDOS) onto the Si atoms that form the DB pair.
The PDOS are shown for all inequivalent sites and different charge states of the “cross” (left) and the “line” (right) pairs. A broadening of 0.2 eV was applied. Energies are given in relation to the valence band edge of the fully passivated surface, marked with a dashed line. The dot in the labels [e.g., 
] indicates which of the DB sites the PDOS belongs to.
