Figure 5
From: Substrate-induced interfacial plasmonics for photovoltaic conversion
Size-/spacing-dependent interfacial plasmon enhancement.
(a) IPCE spectra of PVDs containing different metal NPs. PVDs were formed by annealing Ag/Au (1:1) alloy films of thicknesses of 0 (SLG), 4, 6, 8, 10, 12 and 14 nm. The inset is the short-circuit currents of the corresponding devices, measured under 100 mW cm–2 visible light irradiation. (b) Side views of electrical field distributions of different TiO2/SLG/NP systems (top: 4-nm-thick NPs with 21-nm diameter and 40-nm spacing; middle: 8-nm-thick NPs with 38-nm diameter and 67-nm spacing; bottom: 12-nm-thick NPs with 64-nm diameter and 100-nm spacing). The field images were obtained from two-dimensional FDTD calculations. (c) Corresponding light intensities as a function of distance at the interfaces of TiO2/SLG/NP systems with different NP thicknesses.
