Figure 8
From: Vertical transport in graphene-hexagonal boron nitride heterostructure devices
(a) Top panel: ID-VD characteristic of the simulated graphene/(3-layer h-BN)/graphene heterostructure for different value of the voltage VG applied to the back gate. Bottom panel: difference as a function of VG between the electrostatic potential in the upper and lower graphene layer, evaluated at the y coordinate midway between the left and right contact. Inset: Simulation geometry of the considered gated graphene/h-BN/graphene and graphene/h-BC2N/graphene heterostructures. (b) Same as the panels (a), for the case of a graphene/(5-layer h-BN)/graphene heterostructure.
