Figure 4
From: In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy
(a) Plan-view TEM image of transferred graphene/h-BN heterostructure (Sample B). (b) SAED pattern of Sample B. Diffraction patterns with six-fold symmetry are observed. The inset is enlarged image of the red square area marked in Fig. 4(b). Two diffraction spots are observed, revealing the (100) plane distance of 2.13 Å and 2.06 Å, respectively. (c) Cross-sectional TEM image of Sample B. The thickness of the heterostructure is about 15 nm.
