Figure 1
From: Microscopic basis for the band engineering of Mo1−xWxS2-based heterojunction
STM/STS on the WS2/Mo1−xWxS2 heterostructure.
(a) STM image of a typical Mo1−xWxS2 structure grown by CVD on a graphite substrate (Vs = +2.5 V, It = 0.25 A). (b) Cross section along the blue line in a and schematic structure of the STM image in (a). (c) Magnification of the part of the interface indicated by two red triangles at the top and bottom in a. (d,e) Schematic models of the STM images in (c,a). (f,g) STM images of Mo-rich Mo1−xWxS2 area obtained at sample bias voltages of Vs = +1.6 and +1.3 V, respectively. (h) dI/dV spectra obtained in the Mo and W areas indicated by the white and blue squares in (g). The gray rectangle indicates the noise level. (i) Magnification of the spectra in (h) near the conduction band edge ECBM. (j) High-resolution STM image of Mo-rich Mo1−xWxS2 area.
