Figure 3
From: Microscopic basis for the band engineering of Mo1−xWxS2-based heterojunction
Potential landscape of WS2/Mo1−xWxS2 interface.
(a) STM image of WS2/MoxW1−xS2 interface (Vs = +1.6 V, It = 0.3 nA). The inset shows the STM image simultaneously obtained with spectroscopy. (b) Map of color scale dI/dV curves calculated from the spatially resolved STS spectra measured along the white dashed line in the inset of (a). (c) Map of ECBM obtained over the area shown in (a). (d) Cross sections of ECBM (top) and EVBM (middle), respectively corresponding to the upper and lower edges in (b) and electric field Efield (bottom) obtained by differentiating the cross section of ECBM (top). (e) dI/dV spectra obtained at the positions indicated by red and blue arrows in (b), which were averaged over the left and right edge lines in the inset of (a), respectively. The gray rectangle indicates the noise level. (f) Schematic image of the band structure of the WS2/Mo1−xWxS2 heterojunction. The values in (f) are those in (e). WSCR indicates the width of space charge region.
