Table 1 Tempering conditions and the lattice parameters, crystalline size, electrical properties of FTO films.
From: Reference of Temperature and Time during tempering process for non-stoichiometric FTO films
Tempered conditions | volume of unit cell V (Å3) | Crystalline size D (nm) | Hall coefficient Rh(×10−2 cm3·C−1) | mean free path l(nm) | l/D | calculated emissivity ε | |
|---|---|---|---|---|---|---|---|
Temperature | Time | ||||||
600 °C | 72.596 | 20.08 | −1.23 | 3.80 | 18.92% | 0.24 | |
650 °C | 72.918 | 20.26 | −1.41 | 3.73 | 18.41% | 0.27 | |
680 °C | 220 s | 73.002 | 21.60 | −1.85 | 4.04 | 18.70% | 0.34 |
700 °C | 72.625 | 21.10 | −1.65 | 3.22 | 15.26% | 0.36 | |
720 °C | 72.890 | 19.65 | −1.72 | 1.60 | 8.14% | 0.54 | |
150 s | 72.509 | 20.99 | −1.51 | 3.22 | 15.34% | 0.27 | |
190 s | 72.652 | 21.30 | −1.45 | 3.80 | 17.84% | 0.32 | |
700 °C | 220 s | 72.625 | 21.10 | −1.65 | 3.22 | 15.26% | 0.36 |
260 s | 72.688 | 21.49 | −1.87 | 2.94 | 13.68% | 0.38 | |
300 s | 72.771 | 21.11 | −2.90 | 0.97 | 4.59% | 0.45 | |
