Figure 1
From: Enhanced electron-phonon coupling for a semiconductor charge qubit in a surface phonon cavity
A SAW phonon cavity.
(a) A schematic of the proposed phonon cavity. Two arrays of BRs for λBR determined by the period a are placed at the distance D. A DQD is formed at a distance d beneath the sample surface. SAWs are reflected at metal edges with a reflection coefficient r. Cavity mode is indicated by the standing wave beneath the schematic with a node in the middle of the DQD so maximum electron-phonon coupling can be obtained. (b) A scanning electron micrograph (SEM) of a control device with identical design to Device B. Metal layers with the thickness of 10 nm for Ti and 30 nm for Au are patterned. Periodic arrays serve as BRs for forming a phonon cavity and IDT for generating SAWs. Fine metal fingers in the middle of the cavity are used to define point contacts for the phase-sensitive local potential measurements or a DQD for studying phonon assisted tunneling.
