Figure 3
From: Enhanced electron-phonon coupling for a semiconductor charge qubit in a surface phonon cavity
The SAW cavity mode.
(a) A schematic diagram for device B with circuit diagrams used in this measurement. This device was used to study the formation of SAW cavity modes and the coupling to a charge qubit. G0 separates the device into top and bottom channels and the charge qubit is formed in the top channel by activating gates G1−5. A small D is chosen to enhance the electron-phonon coupling inside the small cavity. (b) Frequency dependence of the SAW amplitude at PC2, taken at 30 mK. The major peaks (I & II) exhibit standing wave nature which is shown in the right inset for peak I. Right inset: A comparison of the signals’ phase measured at PC1-5. An approximately π phase difference is observed between PC1-3 and PC4-5, which demonstrates the formation of a standing wave inside this device. Left inset: A schematic of the cavity mode with respect to the DQD.
