Table 1 Total magnetic moment and the amount of charge transfer from Cu to Cu2O in int-2Oads with one VCu at different locations.

From: Electronic Structure and Ferromagnetism Modulation in Cu/Cu2O Interface: Impact of Interfacial Cu Vacancy and Its Diffusion

Structure

Type of VCu

VCu location

Charge transfer from Cu to Cu2O (e)

Total magnetic moment (μB)

int-2Oads

N/A

N/A

2.58

0.000

int-2Oads-VCu(1)

sat

Layer 1

2.79

0.000

int-2Oads-VCu(2)

sat

Layer 2

2.57

0.501

int-2Oads-VCu(3)

uns

2.60

0.000

int-2Oads-VCu(4)

sat

2.57

0.420

int-2Oads-VCu(5)

uns

2.62

0.000

int-2Oads-VCu(6)

uns

Layer 3

2.58

0.002

int-2Oads-VCu(7)

sat

2.58

0.000

int-2Oads-VCu(8)

sat

2.58

0.001

int-2Oads-VCu(9)

uns

2.58

0.000