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Figure 1

From: Filament Geometry Induced Bipolar, Complementary and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN

Figure 1

Device structure and electrical characterizations depending on a set current compliance (set-CC).

(a) A schematic diagram of the device structure and electrical characterization setup. (b) The Vreset decreases under the increasing set-CC from 500 μA to 1 mA. (c) In contrast, the Vreset increases under the set-CC of 2–4 mA. A CRS-like I-V characteristic appears. (red arrow) (d) The Vreset increases under the set-CC of 5–7 mA except 6 mA. (e) The CRS-like I-V characteristic disappears under the set-CC of 6 mA. (f) Correlation between Vreset and Ireset is represented.

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