Figure 3 | Scientific Reports

Figure 3

From: Filament Geometry Induced Bipolar, Complementary and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN

Figure 3

60 switching cycles (a) under 1 mA set-CC (low set-CC) and (b) under 5 mA set-CC (high set-CC).

(c) Comparison of Ion and Ioff for the low and high set-CC. (measured at +0.3 V) (d) Correspondence between Vreset and Ion for the high set-CC. (e) Correspondence between Vset and Ioff for the high set-CC. (f) Correspondence of current level with respect to the sign of read voltage is examined.

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