Figure 9
(a) O-K edge X-ray absorption spectra for as-SiOx (blue line), as-SiO (red line) and set-SiOx (purple line) subjected to a set-CC of 7 mA. (b) The defect levels arising from Si−Si nano-crystalline or oxygen vacancy. The left-side indicates the length between Si atoms in the defect in the different defect states. (c) High-resolution TEM images for (I) as-SiOx, (II) set-SiOx, (III) the region indicated by the dashed rectangle in region II and (IV) lattice spacing along the nano-crystalline in region III. The red lines delineate the lattice spacing (2.965/13 ≈ 0.23 nm) in region III.
