Figure 3 | Scientific Reports

Figure 3

From: RETRACTED ARTICLE: Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities

Figure 3

Cross-sectional SEM image of (a) cross section of the porous silicon without HfO2 filling and (b) with HfO2 filling. (c) is the frontside SEM image of the porous silicon layer. (d) is the Hf 4f core level spectra for HfO2-filling samples. Silicide subpeaks can be observed for samples, which implies the introduction of Si within HfO2 dielectric. From deconvolution, it consists of Hf-Si bond (Hf 4f 5/2 :18.9 eV; Hf 4f 7/2 :17.4 eV) besides Hf-O component (Hf4f 5/2 :18.5 eV; Hf 4f 7/2 :16.8 eV). The diagram of microcavities filled with HfO2 in porous Si is shown in the inset.

Back to article page