Figure 3 | Scientific Reports

Figure 3

From: Sintering boron carbide ceramics without grain growth by plastic deformation as the dominant densification mechanism

Figure 3

The details of change in relative density and grain size with changing temperature for B4C sintered under 80 MPa, held for 5 min.

(a) Relative density and grain size of B4C as a function of temperature, sintered under 80 MPa, with soaking for 5 min. (b) Relationship between grain growth (D/Do) and relative density in different sintering methods. (cf) Polished and etched surfaces of B4C sintered under 80 MPa, with soaking for 5 min, at 1,600 °C, 1,700 °C, 1,750 °C and 1,800 °C, respectively.

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