Figure 8
From: A New Strategy of Lithography Based on Phase Separation of Polymer Blends
(a) Raman shift of BPE (10−4, 10−5, 10−6 and 10−9 M) on SERS substrate of Ag nanodots and bare silicon wafer (10−2 M) (exposure time = 10 s). The Raman intensity of BPE on bare silicon was multiplied by 10. (b) Reproducibility test for SERS spectra of BPE molecules at ten random different points on the SERS substrate of Ag dot arrays. (BPE = 10−4 M; exposure time = 10 s).
