Table 2 The theoretical calculated vertical detachment energy (VDE), compared to the experimental values and the previous calculated results at PBEPBE/6-311 + G* level for anions.

From: Understanding the structural transformation, stability of medium-sized neutral and charged silicon clusters

Cluster

VDE

ADE

Cluster

VIP

AIP

This work

Exp.a

Theor.a

This work

Exp.b

Si20

3.65

3.57

3.587

1.52

Si20

7.06

7.05

7.46–7.53

Si21

3.60

3.57

3.564

1.91

Si21

7.07

6.98

6.80–6.94

Si22

3.43

3.37

3.299

1.16

Si22

7.28

6.85

5.85–5.95

Si23

3.27

3.26

3.194

2.48

Si23

6.60

6.21

5.95–6.05

Si24

3.56

3.66

3.597

2.43

Si24

7.03

6.81

5.95–6.05

Si25

3.24

3.21

3.206

2.02

Si25

6.89

6.59

5.95–6.05

Si26

3.27

3.34

3.311

3.17

Si26

6.74

6.40

5.90–5.95

Si27

3.31

3.41

3.142

2.96

Si27

6.50

6.29

5.80–5.90

Si28

3.43

3.38

3.271

3.20

Si28

6.56

6.38

5.80–5.90

Si29

3.40

3.41

3.402

3.25

Si29

6.28

6.10

5.8

Si30

3.51

3.46

3.613

3.27

Si30

6.61

6.40

5.70–5.80

  1. The adiabatic detachment energy (ADE) for anions, as well as vertical and adiabatic ionization potential (VIP and AIP) for neutral cluster are also collected. All energies are in units of eV.
  2. aref. 41.
  3. bref. 18.