Figure 4 | Scientific Reports

Figure 4

From: Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission

Figure 4

Microstructural characteristics of UIF and EIF NWs from TEM imaging.

(a,b) BF-TEM images of the investigated UIF and EIF InGaN NWs, respectively. (c,d) High resolution TEM images taken selectively at the apex of each NW. The insets are lattice-resolved TEM images showing the crystal quality at the atomic scale. (e,f) High resolution TEM images taken at the roots of the investigated NWs, which are highlighted with the orange squares in (a,b).

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