Figure 1
From: Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications
Magnetization versus magnetic field curves are shown for ZnBixO1−x thin film samples grown under a 1 mTorr O2 pressure, measured at (a) 10 K and (b) 300 K using SQUID magnetometry. For ZnBixO1−x thin film samples grown under a 2 mTorr O2 pressure measurements are shown at (c) 10 K and (d) 300 K. The saturation (e) and the remanent magnetization (f) are shown versus bismuth concentration at 300 K for the samples grown under a 1 mTorr and 2 mTorr O2 pressure, respectively.
