Table 1 The formation energy, the magnetic moment per Bi atom for different doping concentration in the ZnBixO1−x system and the energy difference between antiferromagnetic and ferromagnetic alignments are given.

From: Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications

Zn BixO1−x

Formation Energy (eV/f.u)

Magnetic moment/Bi atom (μB)

ΔE = EAFM–EFM (meV)

Stability

x = 0.015

−0.06

0.15

17.3

FM

x = 0.031

−0.11

0.26

108.5

FM

x = 0.055

−0.18

0.45

65.5

FM

  1. For all the concentrations shown here the ferromagnetic alignment is found as the most energetically stable.
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