Figure 2
From: Observation of strongly enhanced photoluminescence from inverted cone-shaped silicon nanostructures
PL emission spectra of SiNWs and SiNCs.
(a) Emission spectra from a SiNW (NW1) and a SiNC (C4) excited at 1.28 mW with a 660 nm cw laser. The signals are normalized to unity with respect to the highest peak. The SiNW spectrum is multiplied by a factor of 70 for better visualization. The insets show the broadband, far-field lasing emission of C4 and NW1 monitored by an InGaAs camera. The center of the white circles indicates the position of the SiNC and the SiNW, respectively. (b) Intensity ratio of the PL spectra (C4, NW1) shown in panel (a). (c) PL emission from SiNC with different geometries (C1, C2, C3, C4 in supplementary information S1) obtained using the same experimental conditions as described in panel (a). All signals are normalized to unity with respect to the highest peak intensity and shifted for reasons of clarity.
