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Figure 1

From: Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

Figure 1

NP array and device fabrication.

(a) Tilted SEM of as-grown InGaAs nanopillar array. Scale bar, 600 nm. (b) Fabricated NOAAD with ground-signal-ground (GSG) contacts for high speed measurements. The signal contact is deposited directly on the BCB to electrically isolate it from the substrate. Scale bar, 80 μm. Inset: Tilted metal deposition results in a self-aligned nanohole array.

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