Figure 4 | Scientific Reports

Figure 4

From: Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

Figure 4

Excess noise.

(a) The gain is calculated for each electron trajectory in Fig. 3c and matches well with the measured gain (symbols). (b) Measured current noise spectral density of the dark current and dark current plus photocurrent. Note that the photocurrent noise could not be measured at the highest gains due to the increase in dark current noise. (c) Excess noise vs. Gain of the InGaAs NOAAD. The symbols show the measured excess noise factor and the solid line is calculated using 3D-DSMT. The dotted lines are calculated using Mcyntre’s theory for (from bottom to top) k = 0.05, 0.10, 0.15 and 0.20.

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