Table 1 Summary of the OFET electrical performances measured in the saturation regime using e-PVDF-HFP dielectric layer (thickness 1.4 μm).

From: Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

Sample

mobilityMAX

Mobilityave

on/offave

Vtave (V)

gmave (μS)

gmave/W (S/m)

gmavg/Vbias,(μS/V)2

(cm2V−1s−1)

(cm2V−1s−1)

P3HT

0.14

0.09 ± 0.05

4 × 103

0.01 ± 0.59

3.48

3.48 × 10−3

1.16

(4.86)*

(3.21 ± 1.64)

PII2T

0.19

0.17 ± 0.02

8 × 103

−0.55 ± 0.08

3.42

3.42 × 10−3

1.14

(7.35)

(3.52 ± 1.78)

PTDPPTFT4

2.11

1.09 ± 0.44

2 × 104

−0.67 ± 0.31

26.4

26.4 × 10−3

8.8

(75.71)

(38.98 ± 15.77)

Graphene

2181

1.32 ± 0.99 × 103

6

1.08 ± 0.56

1200

1.2

1.2 × 104

(7.11 × 104)

(3.95 ± 2.97) × 104

PCBM

0.03

0.02 ± 0.003

6 × 103

−2.1 ± 0.4

0.54

5.4 × 10−4

0.18

(1.07)

(0.82 ± 0.16)

  1. 1The mobilities in parentheses are extracted from LCR Meter-measured capacitance (8.4 nF cm−2) at 20 Hz.
  2. 2gm/Vbias is normalized with respect to voltage bias. For P3HT, PII2T and PTDPPTFT4 operated in the saturation regime, the value is normalized with respect to the gate voltage (3 V). For graphene operated in the linear regime, the value is normalized with respect to the drain-source voltage (VDS = −0.1 V).
  3. Mobility values were calculated in quasi-static capacitance of 300 nF cm−2. (W: 1000 μm; L = 50 μm).
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