Figure 3
EIS characterization of the sensing interface: (a) bare ITO, (b) ITO/g-C3N4/Bi2S3, (c) ITO/g-C3N4/Bi2S3/CS, (d) ITO/g-C3N4/Bi2S3/CS/DXM/BSA, (e) ITO/g-C3N4/Bi2S3/CS/DXM/BSA/Cd2+@TiO2-anti-DXM.
The inset is the Randles equivalent circuit.
Figure 3 | Scientific Reports
