Table 1 Typical parameters of MBE growth used for InN and GaN monocrystal fabrication.

From: III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared

Structure

Buffer

Buffer growth parameters

Basic growth parameters

InN cup-cavities

200-nm-thick GaN

MBE, ,Ts = 700 °C

MBE, ,Ts = 470 °C

GaN cup-cavities

70-nm-thick AlN

MEE, ,Ts = 784 °C

MBE, Ts = 650 °C

GaN nanocolumns

40-nm-thick GaN

MBE, ,Ts = 605 °C

MBE, ,Ts = 750 °C

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