Figure 3

Integral peak intensities determined from fits to the XPS spectra in the binding energy range of Ni 2p emission obtained from the Ni/NiOx films grown ontop SiOx/Si(100) substrate by PSE-CVD from 2.5 mM precursor solution with various water concentrations (from 0.0% to 10.0 vol%) at a substrate temperature of 270 °C (left) and 300 °C (right).