Figure 2 | Scientific Reports

Figure 2

From: Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control

Figure 2

Temperature dependence of coercivity derived from R(H) and M(H) loops.

(a) Temperature dependence of coercivity of the top and bottom CoFeB layers, obtained from the R(H) loops of the p-MTJ. The inset shows out-of-plane TMR ratio with field scanning in the temperature region from 135 K to 150 K. (b) Temperature dependence of coercivity of the top and bottom CoFeB from unpatterned p-MTJ films. The inset shows M-H loops at different temperatures.

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