Figure 4
Electric voltage assisted magnetization switching.
(a) Typical I-V curves for the CoFeB/MgO/CoFeB p-MTJ in which the applied voltage in either polarity can switch the magnetization from antiparallel to parallel state. The MTJ was initially set in an antiparallel state with a magnetic field of Hbias = 250 Oe. (b) The coercivity of top and bottom CoFeB in the p-MTJ as a function of temperature at Vbias =  ±0.4 V. The coercivity crossover points were observed at the temperature of 125 K and 150 K for Vbias = 0.4 V and −0.4 V, respectively. (c,d) The coercivity of top and bottom CoFeB layers in the p-MTJ as a function of Vbias at 50 K and 300 K, respectively.
