Figure 3
From: Parallel charge sheets of electron liquid and gas in La0.5Sr0.5TiO3/SrTiO3 heterostructures
Nonlinear Hall effect in LSTO films.
(a–c) Evolution of Hall resistance Rxy, carrier density and mobility as functions of LSTO thicknesses. All data are collected at 2 K with no back gate voltage (Vg) applied. The Rxy is linear for 6 uc, but becomes increasingly nonlinear as the film thickness grows. (d–f) Temperature dependence of nonlinear Hall effect, carrier density and mobility for 60 uc LSTO. Nonlinear Hall effect was only observed under 100 K. (g–i) Vg dependence of nonlinear Hall effect, carrier density and mobility for 60 uc LSTO measured at 40 K.
