Figure 8 | Scientific Reports

Figure 8

From: Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

Figure 8

The reduction of the SBH as a function of the channel length when the acceptor density in graphene is 1 × 1012 cm−2.

The inset figure shows the reduction of the SBH in as a function of the acceptor density when the channel length is 2 μm. The HfO2 layer thickness is 20 nm, the electronic mobility is 1300 cm2 V−1 s−1, the ER time is 1 ps and the device temperature is 300 K.

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