Figure 3
From: Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure
The potential distributions and the driving force for a formation of σi in DE/FE system.
(a) external field dependence of total field (Eext + Eint) of each layer in 5 nm-AO/150 nm BTO stack structure. (b) band diagram of bilayer capacitor of Pt/5 nm-AO/150 nm-BTO/Pt bilayer capacitor when applying 1.55 V potential and (c) SRO/25 nm-STO/50 nm-BTO/SRO bilayer capacitor when applying 0.75 V potential.
