Figure 5
From: Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure
An experimental demonstration of NC model in AO/BTO bilayer structure.
(a) bright field TEM images of the cross section of the 5 nm-AO/BTO/SRO/DSO under illumination of a 200 kV electron beam. The inset figure is a high resolution TEM image of AO/BTO interface (b) P-V hysteresis loops of Pt/150 nm-BTO/100 nm-SrRuO3 (diamond symbol), Pt/5 nm-AO/150 nm-BTO/100 nm-SrRuO3 (circle symbol) and Pt/9 nm-AO/150 nm-BTO/100 nm- SrRuO3 (square symbol) capacitors. The dash-dot blue and red dash lines represent the simulated P-V curves for 5 nm and 9 nm AO/BTO bilayer, respectively. The black line represents a P-V response of 5 nm-AO single layer. Yellow background area corresponds to the capacitance augmented region.
