Figure 3
From: InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters
(a) Interband transition wavelength and (b) electron-hole wave function overlap as a function of GaNAs layer thickness for 30 Å In0.2Ga0.8N/d-Å GaN0.95As0.05 QW at carrier density of 1 × 1019 cm−3.
