Figure 4
From: InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters
(a) Spontaneous emission spectra as a function of photon energy with carrier density from 5 × 1018 cm−3 to 1 × 1019 cm−3 for conventional 30 Å In0.35Ga0.65N QW and 30 Å In0.2Ga0.8N/10 Å GaN0.95As0.05 QW and (b) Spontaneous emission rate Rsp as a function of carrier density for conventional 30 Å In0.35Ga0.65N QW, 30 Å In0.2Ga0.8N/10 Å GaN0.95As0.05 QW, 30 Å In0.2Ga0.8N/15 Å GaN0.95As0.05 QW and 30 Å In0.2Ga0.8N/20 Å GaN0.95As0.05 QW at T = 300 K.
