Figure 2

The magneto-resistance response of the spin-valve devices. MR loops of

(a) LSMO(50 nm)/C₆₀(120 nm)/Co(15 nm) and (b) LSMO(50 nm)/C₇₀(120 nm)/Co(15 nm) OSV device measured at 20 K, with an applied bias voltage of −20 mV. The magnetization configurations are shown in the insets when the field is swept from positive field to negative field. (c) Temperature dependence of MR for the device of LSMO(50 nm)/C₆₀(180 nm)/Co(15 nm) and LSMO(50 nm)/C₇₀(180 nm)/Co(15 nm) OSV; (d) Bias voltage dependence of MR for the device of LSMO(50 nm)/C₆₀(180 nm)/Co(15 nm) and LSMO(50 nm)/C₇₀(180 nm)/Co(15 nm) OSV measured at 20 K. The bars in (c,d) show errors of the measurement.