Figure 4
Band structure of tinselenidene calculated by mBJ method under uniaxial strain from −10% to 10% along x (a) and y (b) directions.
The CBM and VBM in the band structure are marked by CY, CX and VY, VX, respectively. The energies of CY, CX, VY and VX as a function of strain in the x (c) and y (d) directions are plotted. The indirect band gap appears in regions I, III, IV and VI and the direct band gap appears in the regions II and V. The transition from an indirect gap to a direct gap can be determined by the energy crossover.
