Figure 1

(a) (00l) scan of PSMO films with different thicknesses on LAO substrate; reciprocal spacing mapping around (−103) for (b) 12-nm and (c) 100-nm film; (d) illustration of strain relaxation in tetragonal ratio of MnO6 octahedron.
(a) (00l) scan of PSMO films with different thicknesses on LAO substrate; reciprocal spacing mapping around (−103) for (b) 12-nm and (c) 100-nm film; (d) illustration of strain relaxation in tetragonal ratio of MnO6 octahedron.