Table 1 The electrical and memory performance of OFET memory device with ZnO NPs blended with PS and PVPK as charge-storage layer.
μave [cm2V−1s−1] | ION/IOFF | Vth, ave [V] | Vth, ave [V] | Memory window [V] | ||
|---|---|---|---|---|---|---|
Writing process | Erasing process | |||||
PS | 0.32 ± 0.02 | 106 | −5.90 ± 0.8 | −7.50 ± 0.5 | −9.20 ± 0.3 | 4.23 |
ZnOPS10 | 0.36 ± 0.01 | 106 | −8.87 ± 0.5 | 12.27 ± 1.2 | −10.87 ± 1.3 | 23.14 |
ZnOPS20 | 0.58 ± 0.03 | 106 | −9.29 ± 0.2 | 17.54 ± 2.1 | −10.21 ± 1.2 | 27.75 |
ZnOPS30 | 0.62 ± 0.05 | 105 | −8.53 ± 0.7 | 21.99 ± 1.2 | −9.27 ± 1.1 | 31.26 |
PVPK | 0.12 ± 0.02 | 106 | −4.50 ± 0.8 | −7.50 ± 0.3 | −47.50 ± 1.2 | 36.55 |
ZnOPVPK10 | 0.36 ± 0.01 | 106 | −9.42 ± 0.5 | 11.76 ± 1.2 | −44.48 ± 1.7 | 56.24 |
ZnOPVPK20 | 0.40 ± 0.03 | 106 | −9.78 ± 0.2 | 18.54 ± 2.4 | −40.42 ± 2.3 | 58.96 |
ZnOPVPK30 | 0.48 ± 0.05 | 106 | −10.2 ± 0.7 | 22.98 ± 1.4 | −37.27 ± 0.8 | 60.25 |
